Control of the spontaneous formation of oxide overlayers on GaP nanowires grown by physical vapor deposition

Control of the spontaneous formation of oxide overlayers on GaP nanowires grown by physical vapor deposition

Growth of gallium phosphide nanowires by vapor deposition of simple thermally evaporated inorganic precursors is generally accompanied by unintentional formation of thick oxide coating, which may compromise the optical and electrical properties of the nanowires. Controlling and eliminating this oute...

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Bibliographic Details
Main Authors: Yunyan Wang, Manu Hegde, Shuoyuan Chen, Penghui Yin, Pavle V. Radovanovic
Format: Article
Language:English
Published: AIMS Press 2018-01-01
Series:AIMS Materials Science
Subjects:
III-V nanowires
physical vapor deposition
phosphide
semiconducting materials
native oxide
Online Access:http://www.aimspress.com/Materials/article/1815/fulltext.html

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http://www.aimspress.com/Materials/article/1815/fulltext.html

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