Oxide Thin-Film Transistors With IMO and IGZO Stacked Active Layers for UV Detection
Thin film transistors (TFTs) with amorphous InMgO (a-IMO) and InGaZnO (a-IGZO) stacked active layers are proposed to implement high-performance ultraviolet (UV) detectors. In this structure, the IGZO layer serves as the conductive layer and the IMO layer acts as the light absorption layer. The fabri...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
IEEE
2017-01-01
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| Series: | IEEE Journal of the Electron Devices Society |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/8013019/ |