Performance Improvement of a Nonvolatile UV TD Sensor Using SAHAOS with a High Temperature Annealed, Partially Nano-Crystallized Trapping Layer

This study shows that a silicon–aluminum oxide–hafnium aluminum oxide-silicon oxide–silicon capacitor device with a high temperature pre-metal-anneal-treated and partially-nanocrystallized hafnium aluminum oxide, (hereafter PNC-SAHAOS) can successfully increase the perf...

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Bibliographic Details
Main Author: Wen-Ching Hsieh
Format: Article
Language:English
Published: MDPI AG 2019-04-01
Series:Sensors
Subjects:
UV
TD
Online Access:https://www.mdpi.com/1424-8220/19/7/1570