Circuit-Based Electrothermal Simulation of Multicellular SiC Power MOSFETs Using FANTASTIC
This paper discusses the benefits of an advanced highly-efficient approach to static and dynamic electrothermal simulations of multicellular silicon carbide (SiC) power MOSFETs. The strategy is based on a fully circuital representation of the device, which is discretized into an assigned number of i...
| Main Authors: | , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2020-09-01
|
| Series: | Energies |
| Subjects: | |
| Online Access: | https://www.mdpi.com/1996-1073/13/17/4563 |