Theoretical analysis and design of double implanted MOSFET on 6H silicon carbide wafer for low power dissipation and large breakdown voltage
This paper analyses the device structure of a 6H-SiC vertical double-implanted MOSFET (DIMOSFET) in order to provide a high breakdown voltage of about 10 kV and a low power dissipation for a rise in device temperature of 600 oC. Analysis of an 800 W power dissipation for stable device operation corr...
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| Format: | Article |
| Language: | English |
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Maejo University
2008-05-01
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| Series: | Maejo International Journal of Science and Technology |
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| Online Access: | http://www.mijst.mju.ac.th/vol2/308-319.pdf |