Electrical Characteristics and Stability Improvement of Top-Gate In-Ga-Zn-O Thin-Film Transistors with Al<sub>2</sub>O<sub>3</sub>/TEOS Oxide Gate Dielectrics

Electrical Characteristics and Stability Improvement of Top-Gate In-Ga-Zn-O Thin-Film Transistors with Al<sub>2</sub>O<sub>3</sub>/TEOS Oxide Gate Dielectrics

In this work, two stacked gate dielectrics of Al<sub>2</sub>O<sub>3</sub>/tetraethyl-orthosilicate (TEOS) oxide were deposited by using the equivalent capacitance with 100-nm thick TEOS oxide on the patterned InGaZnO layers to evaluate the electrical characteristics and stabi...

Full description

Bibliographic Details
Main Authors: Yih-Shing Lee, Yu-Hsin Wang, Tsung-Cheng Tien, Tsung-Eong Hsieh, Chun-Hung Lai
Format: Article
Language:English
Published: MDPI AG 2020-11-01
Series:Coatings
Subjects:
top-gate a-IGZO thin-film transistors
gate dielectrics
electrical characteristics
stability
hysteresis
Online Access:https://www.mdpi.com/2079-6412/10/12/1146

Internet

https://www.mdpi.com/2079-6412/10/12/1146

Similar Items