Electrical Characteristics and Stability Improvement of Top-Gate In-Ga-Zn-O Thin-Film Transistors with Al<sub>2</sub>O<sub>3</sub>/TEOS Oxide Gate Dielectrics
In this work, two stacked gate dielectrics of Al<sub>2</sub>O<sub>3</sub>/tetraethyl-orthosilicate (TEOS) oxide were deposited by using the equivalent capacitance with 100-nm thick TEOS oxide on the patterned InGaZnO layers to evaluate the electrical characteristics and stabi...
Main Authors: | , , , , |
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Format: | Article |
Language: | English |
Published: |
MDPI AG
2020-11-01
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Series: | Coatings |
Subjects: | |
Online Access: | https://www.mdpi.com/2079-6412/10/12/1146 |