Thermoelectric effects in nanowire-based MOSFETs
We review a series of works describing thermoelectric effects (TEs) in gated disordered nanowires (field-effect transistor device configuration). After considering the elastic coherent regime characterising sub-Kelvin temperatures, we study the inelastic activated regime occurring at higher temperat...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Taylor & Francis Group
2017-03-01
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| Series: | Advances in Physics: X |
| Subjects: | |
| Online Access: | http://dx.doi.org/10.1080/23746149.2017.1290547 |