Enhanced Reliability of a-IGZO TFTs with a Reduced Feature Size and a Clean Etch-Stopper Layer Structure

Enhanced Reliability of a-IGZO TFTs with a Reduced Feature Size and a Clean Etch-Stopper Layer Structure

Abstract The effects of diffuse Cu+ in amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs) on the microstructure and performance during a clean etch stopper (CL-ES) process and a back channel etch (BCE) process are investigated and compared. The CL-ES layer formed with a clean...

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Bibliographic Details
Main Authors: Jae-Moon Chung, Fang Wu, Seung-Woo Jeong, Ji-Hoon Kim, Yong Xiang
Format: Article
Language:English
Published: SpringerOpen 2019-05-01
Series:Nanoscale Research Letters
Subjects:
Gate drive IC on array (GOA)
Thin-film transistors (TFTs)
a-IGZO
Back channel etch
Etch stopper layer
Online Access:http://link.springer.com/article/10.1186/s11671-019-3001-3

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http://link.springer.com/article/10.1186/s11671-019-3001-3

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