COMPARATIVE ANALYSIS OF QUANTUM EFFECTS IN NANOSCALE MULTIGATE MOSFETS USING VARIATIONAL APPROACH
In this work, the performance of multiple-gate SOI MOSFETs is analysed using variational approach including quantum effects. An analytical model is derived to accounting the quantum effects at the silicon (Si)/silicon dioxide (SiO2) interface. A general procedure is used for calculating the quantum...
| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
Taylor's University
2015-02-01
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| Series: | Journal of Engineering Science and Technology |
| Subjects: | |
| Online Access: | http://jestec.taylors.edu.my/Vol%2010%20issue%202%20February%202015/Volume%20(10)%20Issue%20(2)%20224-234.pdf |