Temperature Dependent Analytical DC Model for Wide Bandgap MESFETs

Temperature Dependent Analytical DC Model for Wide Bandgap MESFETs

In this paper, an analytical model has been developed to predict DC characteristics of wide bandgap metal semiconductor field effect transistors (MESFETs). The model evaluates potential distribution inside the channel of the device by dividing the Schottky barrier depletion layer into four distinct...

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Bibliographic Details
Main Authors: Saif-Ur Rehman, Umer F. Ahmed, Muhammad M. Ahmed, Muhammad N. Khan
Format: Article
Language:English
Published: IEEE 2019-01-01
Series:IEEE Access
Subjects:
MESFETs
analytical model
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Online Access:https://ieeexplore.ieee.org/document/8685089/

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