Sensitivity, Noise and Resolution in a BEOL-Modified Foundry-Made ISFET with Miniaturized Reference Electrode for Wearable Point-of-Care Applications

Sensitivity, Noise and Resolution in a BEOL-Modified Foundry-Made ISFET with Miniaturized Reference Electrode for Wearable Point-of-Care Applications

Ion-sensitive field-effect transistors (ISFETs) form a high sensitivity and scalable class of sensors, compatible with advanced complementary metal-oxide semiconductor (CMOS) processes. Despite many previous demonstrations about their merits as low-power integrated sensors, very little is known abou...

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Bibliographic Details
Main Authors: Francesco Bellando, Leandro Julian Mele, Pierpaolo Palestri, Junrui Zhang, Adrian Mihai Ionescu, Luca Selmi
Format: Article
Language:English
Published: MDPI AG 2021-03-01
Series:Sensors
Subjects:
ISFETs
electrical characterization
noise
transient behavior
DC behavior
Online Access:https://www.mdpi.com/1424-8220/21/5/1779

Internet

https://www.mdpi.com/1424-8220/21/5/1779

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