Employment Of IGBT-Transistors For Bipolar Impulsed Micro-Arc Oxidation
The paper is devoted to the use of insulated gate bipolar transistors (IGBT) for the micro-arc oxidation (MAO) process. The technical requirements to the current switches of power supplies for the pulsed bipolar MAO technology have been developed. The research installation for investigating the IGBT...
| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
Sciendo
2015-09-01
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| Series: | Transport and Telecommunication |
| Subjects: | |
| Online Access: | https://doi.org/10.1515/ttj-2015-0020 |