Porous Silicon and Indium Doped Zinc Oxide Junctions: Synthesis, Characterization, and Application to Electroluminescent Devices
We report the obtaining of electroluminescent devices (ELD) from porous silicon (PS) and indium doped zinc oxide (ZnO:In) junctions. PS presented photoluminescence (PL) in the visible region of the electromagnetic spectrum. ZnO:In thin film was obtained by dip coating technique. SEM images and IR me...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Hindawi Limited
2017-01-01
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| Series: | Journal of Nanomaterials |
| Online Access: | http://dx.doi.org/10.1155/2017/1629702 |