Steep switching in trimmed-gate tunnel FET
We propose a tunnel field-effect transistor (TFET) having a trimmed gate (TG) structure, which considerably improves the subthreshold swing (SS). The TG structure truncates the needless long band-to-band tunneling (BTBT) paths to a “channel”, which normally appear in a conventional TFET, and realize...
| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2018-09-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.5043570 |