Time-Dependent Dielectric Breakdown of Commercial 1.2 kV 4H-SiC Power MOSFETs
Constant-voltage time-dependent dielectric breakdown (TDDB) measurements are performed on recently manufactured commercial 1.2 kV 4H-SiC power metal-oxide-semiconductor (MOS) field-effect transistors (MOSFETs) from three vendors. Abrupt changes of the electric field acceleration parameters (<inli...
Main Authors: | , , , , , |
---|---|
Format: | Article |
Language: | English |
Published: |
IEEE
2021-01-01
|
Series: | IEEE Journal of the Electron Devices Society |
Subjects: | |
Online Access: | https://ieeexplore.ieee.org/document/9463426/ |