Time-Dependent Dielectric Breakdown of Commercial 1.2 kV 4H-SiC Power MOSFETs

Constant-voltage time-dependent dielectric breakdown (TDDB) measurements are performed on recently manufactured commercial 1.2 kV 4H-SiC power metal-oxide-semiconductor (MOS) field-effect transistors (MOSFETs) from three vendors. Abrupt changes of the electric field acceleration parameters (<inli...

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Bibliographic Details
Main Authors: Tianshi Liu, Shengnan Zhu, Marvin H. White, Arash Salemi, David Sheridan, Anant K. Agarwal
Format: Article
Language:English
Published: IEEE 2021-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
Online Access:https://ieeexplore.ieee.org/document/9463426/