Investigation of Al- and N-implanted 4H–SiC applying visible and deep UV Raman scattering spectroscopy
Effects of aluminum (Al) and nitrogen (N) implantation performed at room and at elevated (500 °C) temperatures on epitaxial n-type 4H polytype silicon carbide as well as post-implantation annealing have been studied by Raman scattering spectroscopy. The amorphization of 4H–SiC is observed because of...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2020-05-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.5144579 |