Machine Learning (ML)-Based Model to Characterize the Line Edge Roughness (LER)-Induced Random Variation in FinFET

Machine Learning (ML)-Based Model to Characterize the Line Edge Roughness (LER)-Induced Random Variation in FinFET

ML (Machine Learning)-based artificial neural network (ANN) model is proposed to estimate the LER (line edge roughness)-induced performance variation in Fin-shaped Field Effect Transistor (FinFET). For a given LER features such as rms amplitude(Δ), correlation length along x-direction (A&...

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Bibliographic Details
Main Authors: Jaehyuk Lim, Changhwan Shin
Format: Article
Language:English
Published: IEEE 2020-01-01
Series:IEEE Access
Subjects:
Line edge roughness
process-induced random variation
FinFET
machine learning
artificial neural network
Online Access:https://ieeexplore.ieee.org/document/9179808/

Internet

https://ieeexplore.ieee.org/document/9179808/

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