Machine Learning (ML)-Based Model to Characterize the Line Edge Roughness (LER)-Induced Random Variation in FinFET
ML (Machine Learning)-based artificial neural network (ANN) model is proposed to estimate the LER (line edge roughness)-induced performance variation in Fin-shaped Field Effect Transistor (FinFET). For a given LER features such as rms amplitude(Δ), correlation length along x-direction (A&...
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doaj-8779d5631c264535bc6316fbb92cc72a2021-03-30T04:07:13ZengIEEEIEEE Access2169-35362020-01-01815823715824210.1109/ACCESS.2020.30200669179808Machine Learning (ML)-Based Model to Characterize the Line Edge Roughness (LER)-Induced Random Variation in FinFETJaehyuk Lim0https://orcid.org/0000-0003-1636-8865Changhwan Shin1https://orcid.org/0000-0001-6057-3773Department of Electrical and Computer Engineering, Sungkyunkwan University, Suwon, South KoreaDepartment of Electrical and Computer Engineering, Sungkyunkwan University, Suwon, South KoreaML (Machine Learning)-based artificial neural network (ANN) model is proposed to estimate the LER (line edge roughness)-induced performance variation in Fin-shaped Field Effect Transistor (FinFET). For a given LER features such as rms amplitude(Δ), correlation length along x-direction (A<sub>X</sub>), and correlation length along y-direction (A<sub>Y</sub>), the metrics for device performance such as on-state drive current, off-state leakage current, threshold voltage, and subthreshold swing can be computing-efficiently estimated with the ANN model.https://ieeexplore.ieee.org/document/9179808/Line edge roughnessprocess-induced random variationFinFETmachine learningartificial neural network |
collection |
DOAJ |
language |
English |
format |
Article |
sources |
DOAJ |
author |
Jaehyuk Lim Changhwan Shin |
spellingShingle |
Jaehyuk Lim Changhwan Shin Machine Learning (ML)-Based Model to Characterize the Line Edge Roughness (LER)-Induced Random Variation in FinFET IEEE Access Line edge roughness process-induced random variation FinFET machine learning artificial neural network |
author_facet |
Jaehyuk Lim Changhwan Shin |
author_sort |
Jaehyuk Lim |
title |
Machine Learning (ML)-Based Model to Characterize the Line Edge Roughness (LER)-Induced Random Variation in FinFET |
title_short |
Machine Learning (ML)-Based Model to Characterize the Line Edge Roughness (LER)-Induced Random Variation in FinFET |
title_full |
Machine Learning (ML)-Based Model to Characterize the Line Edge Roughness (LER)-Induced Random Variation in FinFET |
title_fullStr |
Machine Learning (ML)-Based Model to Characterize the Line Edge Roughness (LER)-Induced Random Variation in FinFET |
title_full_unstemmed |
Machine Learning (ML)-Based Model to Characterize the Line Edge Roughness (LER)-Induced Random Variation in FinFET |
title_sort |
machine learning (ml)-based model to characterize the line edge roughness (ler)-induced random variation in finfet |
publisher |
IEEE |
series |
IEEE Access |
issn |
2169-3536 |
publishDate |
2020-01-01 |
description |
ML (Machine Learning)-based artificial neural network (ANN) model is proposed to estimate the LER (line edge roughness)-induced performance variation in Fin-shaped Field Effect Transistor (FinFET). For a given LER features such as rms amplitude(Δ), correlation length along x-direction (A<sub>X</sub>), and correlation length along y-direction (A<sub>Y</sub>), the metrics for device performance such as on-state drive current, off-state leakage current, threshold voltage, and subthreshold swing can be computing-efficiently estimated with the ANN model. |
topic |
Line edge roughness process-induced random variation FinFET machine learning artificial neural network |
url |
https://ieeexplore.ieee.org/document/9179808/ |
work_keys_str_mv |
AT jaehyuklim machinelearningmlbasedmodeltocharacterizethelineedgeroughnesslerinducedrandomvariationinfinfet AT changhwanshin machinelearningmlbasedmodeltocharacterizethelineedgeroughnesslerinducedrandomvariationinfinfet |
_version_ |
1724182315532288000 |