Amorphous oxide thin-film transistors and inverters enabled by solution-processed multi-layers as active channels
This paper reports an indium zinc oxide (IZO) thin film transistor (TFT) with a multi-stacked structure that showed improved performance compared to the TFT with a single active-layer structure. Devices with a multi-stacked active-layer structure were fabricated using an IZO solution process. The de...
| Main Authors: | , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2020-09-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.5140234 |