Amorphous oxide thin-film transistors and inverters enabled by solution-processed multi-layers as active channels

This paper reports an indium zinc oxide (IZO) thin film transistor (TFT) with a multi-stacked structure that showed improved performance compared to the TFT with a single active-layer structure. Devices with a multi-stacked active-layer structure were fabricated using an IZO solution process. The de...

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Main Authors:	Hong-Bo Guo, Fei Shan, Han-Sang Kim, Jae-Yun Lee, Nam Kim, Yu Zhao, Sung-Jin Kim
Format:	Article
Language:	English
Published:	AIP Publishing LLC 2020-09-01
Series:	AIP Advances
Online Access:	http://dx.doi.org/10.1063/1.5140234

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record_format	Article
spelling	doaj-87834dff69e046ada4d4e36c4579b5b82020-11-25T03:24:50ZengAIP Publishing LLCAIP Advances2158-32262020-09-01109095317095317-610.1063/1.5140234Amorphous oxide thin-film transistors and inverters enabled by solution-processed multi-layers as active channelsHong-Bo Guo0Fei Shan1Han-Sang Kim2Jae-Yun Lee3Nam Kim4Yu Zhao5Sung-Jin Kim6College of Electrical and Computer Engineering, Chungbuk National University, Cheongju 28644, South KoreaCollege of Electrical and Computer Engineering, Chungbuk National University, Cheongju 28644, South KoreaCollege of Electrical and Computer Engineering, Chungbuk National University, Cheongju 28644, South KoreaCollege of Electrical and Computer Engineering, Chungbuk National University, Cheongju 28644, South KoreaCollege of Electrical and Computer Engineering, Chungbuk National University, Cheongju 28644, South KoreaCollege of Information Engineering, Yangzhou University, Yangzhou, Jiangsu 225009, ChinaCollege of Electrical and Computer Engineering, Chungbuk National University, Cheongju 28644, South KoreaThis paper reports an indium zinc oxide (IZO) thin film transistor (TFT) with a multi-stacked structure that showed improved performance compared to the TFT with a single active-layer structure. Devices with a multi-stacked active-layer structure were fabricated using an IZO solution process. The determination results showed that the electrical operation and environmental stability of multi-stacked IZO TFTs were improved significantly compared to those of single active-layer IZO TFTs. The roughness of the device surface was measured by atomic force microscopy. The root mean square calculation showed that the multi-stacked active-layer IZO TFT had a smoother surface. The multi-stack structured IZO TFT showed an exceptional electron mobility of 7.75 ± 0.2 cm2/V s, an on–off current ratio of 4.67 × 105 ± 0.55 × 105, and a subthreshold swing of 1.11 V/decade. In addition, a weak threshold voltage (0.35 ± 0.42 V) that is more conducive to device driving was obtained. These results highlight the great potential of multi-stack structured IZO TFTs for applications in active-matrix backplane displays.http://dx.doi.org/10.1063/1.5140234
collection	DOAJ
language	English
format	Article
sources	DOAJ
author	Hong-Bo Guo Fei Shan Han-Sang Kim Jae-Yun Lee Nam Kim Yu Zhao Sung-Jin Kim
spellingShingle	Hong-Bo Guo Fei Shan Han-Sang Kim Jae-Yun Lee Nam Kim Yu Zhao Sung-Jin Kim Amorphous oxide thin-film transistors and inverters enabled by solution-processed multi-layers as active channels AIP Advances
author_facet	Hong-Bo Guo Fei Shan Han-Sang Kim Jae-Yun Lee Nam Kim Yu Zhao Sung-Jin Kim
author_sort	Hong-Bo Guo
title	Amorphous oxide thin-film transistors and inverters enabled by solution-processed multi-layers as active channels
title_short	Amorphous oxide thin-film transistors and inverters enabled by solution-processed multi-layers as active channels
title_full	Amorphous oxide thin-film transistors and inverters enabled by solution-processed multi-layers as active channels
title_fullStr	Amorphous oxide thin-film transistors and inverters enabled by solution-processed multi-layers as active channels
title_full_unstemmed	Amorphous oxide thin-film transistors and inverters enabled by solution-processed multi-layers as active channels
title_sort	amorphous oxide thin-film transistors and inverters enabled by solution-processed multi-layers as active channels
publisher	AIP Publishing LLC
series	AIP Advances
issn	2158-3226
publishDate	2020-09-01
description	This paper reports an indium zinc oxide (IZO) thin film transistor (TFT) with a multi-stacked structure that showed improved performance compared to the TFT with a single active-layer structure. Devices with a multi-stacked active-layer structure were fabricated using an IZO solution process. The determination results showed that the electrical operation and environmental stability of multi-stacked IZO TFTs were improved significantly compared to those of single active-layer IZO TFTs. The roughness of the device surface was measured by atomic force microscopy. The root mean square calculation showed that the multi-stacked active-layer IZO TFT had a smoother surface. The multi-stack structured IZO TFT showed an exceptional electron mobility of 7.75 ± 0.2 cm2/V s, an on–off current ratio of 4.67 × 105 ± 0.55 × 105, and a subthreshold swing of 1.11 V/decade. In addition, a weak threshold voltage (0.35 ± 0.42 V) that is more conducive to device driving was obtained. These results highlight the great potential of multi-stack structured IZO TFTs for applications in active-matrix backplane displays.
url	http://dx.doi.org/10.1063/1.5140234
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Amorphous oxide thin-film transistors and inverters enabled by solution-processed multi-layers as active channels

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