Amorphous oxide thin-film transistors and inverters enabled by solution-processed multi-layers as active channels
This paper reports an indium zinc oxide (IZO) thin film transistor (TFT) with a multi-stacked structure that showed improved performance compared to the TFT with a single active-layer structure. Devices with a multi-stacked active-layer structure were fabricated using an IZO solution process. The de...
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doaj-87834dff69e046ada4d4e36c4579b5b82020-11-25T03:24:50ZengAIP Publishing LLCAIP Advances2158-32262020-09-01109095317095317-610.1063/1.5140234Amorphous oxide thin-film transistors and inverters enabled by solution-processed multi-layers as active channelsHong-Bo Guo0Fei Shan1Han-Sang Kim2Jae-Yun Lee3Nam Kim4Yu Zhao5Sung-Jin Kim6College of Electrical and Computer Engineering, Chungbuk National University, Cheongju 28644, South KoreaCollege of Electrical and Computer Engineering, Chungbuk National University, Cheongju 28644, South KoreaCollege of Electrical and Computer Engineering, Chungbuk National University, Cheongju 28644, South KoreaCollege of Electrical and Computer Engineering, Chungbuk National University, Cheongju 28644, South KoreaCollege of Electrical and Computer Engineering, Chungbuk National University, Cheongju 28644, South KoreaCollege of Information Engineering, Yangzhou University, Yangzhou, Jiangsu 225009, ChinaCollege of Electrical and Computer Engineering, Chungbuk National University, Cheongju 28644, South KoreaThis paper reports an indium zinc oxide (IZO) thin film transistor (TFT) with a multi-stacked structure that showed improved performance compared to the TFT with a single active-layer structure. Devices with a multi-stacked active-layer structure were fabricated using an IZO solution process. The determination results showed that the electrical operation and environmental stability of multi-stacked IZO TFTs were improved significantly compared to those of single active-layer IZO TFTs. The roughness of the device surface was measured by atomic force microscopy. The root mean square calculation showed that the multi-stacked active-layer IZO TFT had a smoother surface. The multi-stack structured IZO TFT showed an exceptional electron mobility of 7.75 ± 0.2 cm2/V s, an on–off current ratio of 4.67 × 105 ± 0.55 × 105, and a subthreshold swing of 1.11 V/decade. In addition, a weak threshold voltage (0.35 ± 0.42 V) that is more conducive to device driving was obtained. These results highlight the great potential of multi-stack structured IZO TFTs for applications in active-matrix backplane displays.http://dx.doi.org/10.1063/1.5140234 |
collection |
DOAJ |
language |
English |
format |
Article |
sources |
DOAJ |
author |
Hong-Bo Guo Fei Shan Han-Sang Kim Jae-Yun Lee Nam Kim Yu Zhao Sung-Jin Kim |
spellingShingle |
Hong-Bo Guo Fei Shan Han-Sang Kim Jae-Yun Lee Nam Kim Yu Zhao Sung-Jin Kim Amorphous oxide thin-film transistors and inverters enabled by solution-processed multi-layers as active channels AIP Advances |
author_facet |
Hong-Bo Guo Fei Shan Han-Sang Kim Jae-Yun Lee Nam Kim Yu Zhao Sung-Jin Kim |
author_sort |
Hong-Bo Guo |
title |
Amorphous oxide thin-film transistors and inverters enabled by solution-processed multi-layers as active channels |
title_short |
Amorphous oxide thin-film transistors and inverters enabled by solution-processed multi-layers as active channels |
title_full |
Amorphous oxide thin-film transistors and inverters enabled by solution-processed multi-layers as active channels |
title_fullStr |
Amorphous oxide thin-film transistors and inverters enabled by solution-processed multi-layers as active channels |
title_full_unstemmed |
Amorphous oxide thin-film transistors and inverters enabled by solution-processed multi-layers as active channels |
title_sort |
amorphous oxide thin-film transistors and inverters enabled by solution-processed multi-layers as active channels |
publisher |
AIP Publishing LLC |
series |
AIP Advances |
issn |
2158-3226 |
publishDate |
2020-09-01 |
description |
This paper reports an indium zinc oxide (IZO) thin film transistor (TFT) with a multi-stacked structure that showed improved performance compared to the TFT with a single active-layer structure. Devices with a multi-stacked active-layer structure were fabricated using an IZO solution process. The determination results showed that the electrical operation and environmental stability of multi-stacked IZO TFTs were improved significantly compared to those of single active-layer IZO TFTs. The roughness of the device surface was measured by atomic force microscopy. The root mean square calculation showed that the multi-stacked active-layer IZO TFT had a smoother surface. The multi-stack structured IZO TFT showed an exceptional electron mobility of 7.75 ± 0.2 cm2/V s, an on–off current ratio of 4.67 × 105 ± 0.55 × 105, and a subthreshold swing of 1.11 V/decade. In addition, a weak threshold voltage (0.35 ± 0.42 V) that is more conducive to device driving was obtained. These results highlight the great potential of multi-stack structured IZO TFTs for applications in active-matrix backplane displays. |
url |
http://dx.doi.org/10.1063/1.5140234 |
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