Ferroelectric HfO2-based materials for next-generation ferroelectric memories

Ferroelectric HfO2-based materials for next-generation ferroelectric memories

Ferroelectric random access memory (FeRAM) based on conventional ferroelectric perovskites, such as Pb(Zr,Ti)O3 and SrBi2Ta2O9, has encountered bottlenecks on memory density and cost, because those conventional perovskites suffer from various issues mainly including poor complementary metal-oxide-se...

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Bibliographic Details
Main Authors: Zhen Fan, Jingsheng Chen, John Wang
Format: Article
Language:English
Published: World Scientific Publishing 2016-06-01
Series:Journal of Advanced Dielectrics
Subjects:
HfO2
nonvolatile memory
FeRAM
ferroelectric
thin film
orthorhombic phase
Online Access:http://www.worldscientific.com/doi/pdf/10.1142/S2010135X16300036

Internet

http://www.worldscientific.com/doi/pdf/10.1142/S2010135X16300036

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