Vapor-deposited zeolitic imidazolate frameworks as gap-filling ultra-low-k dielectrics

Vapor-deposited zeolitic imidazolate frameworks as gap-filling ultra-low-k dielectrics

Insulating materials combining a high mechanical stability, a low dielectric constant and the ability to completely fill narrow gaps are essential to fabricate interconnects for future high-performance chips. Here, the authors integrate zeolitic imidazolate frameworks as ultra-low-k dielectrics with...

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Main Authors: Mikhail Krishtab, Ivo Stassen, Timothée Stassin, Alexander John Cruz, Oguzhan Orkut Okudur, Silvia Armini, Chris Wilson, Stefan De Gendt, Rob Ameloot
Format: Article
Language:English
Published: Nature Publishing Group 2019-08-01
Series:Nature Communications
Online Access:https://doi.org/10.1038/s41467-019-11703-x
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spelling doaj-87c3378f4c7b4710a082cda83ed8d0cb2021-05-11T12:29:22ZengNature Publishing GroupNature Communications2041-17232019-08-011011910.1038/s41467-019-11703-xVapor-deposited zeolitic imidazolate frameworks as gap-filling ultra-low-k dielectricsMikhail Krishtab0Ivo Stassen1Timothée Stassin2Alexander John Cruz3Oguzhan Orkut Okudur4Silvia Armini5Chris Wilson6Stefan De Gendt7Rob Ameloot8Department of Microbial and Molecular Systems, Centre for Surface Chemistry and Catalysis, KU Leuven - Celestijnenlaan 200FDepartment of Microbial and Molecular Systems, Centre for Surface Chemistry and Catalysis, KU Leuven - Celestijnenlaan 200FDepartment of Microbial and Molecular Systems, Centre for Surface Chemistry and Catalysis, KU Leuven - Celestijnenlaan 200FDepartment of Microbial and Molecular Systems, Centre for Surface Chemistry and Catalysis, KU Leuven - Celestijnenlaan 200Fimec - Kapeldreef 75imec - Kapeldreef 75imec - Kapeldreef 75imec - Kapeldreef 75Department of Microbial and Molecular Systems, Centre for Surface Chemistry and Catalysis, KU Leuven - Celestijnenlaan 200FInsulating materials combining a high mechanical stability, a low dielectric constant and the ability to completely fill narrow gaps are essential to fabricate interconnects for future high-performance chips. Here, the authors integrate zeolitic imidazolate frameworks as ultra-low-k dielectrics within a 90 nm pitch metallization layer via selective vapor-based conversion of metal oxide films.https://doi.org/10.1038/s41467-019-11703-x
collection DOAJ
language English
format Article
sources DOAJ
author Mikhail Krishtab
Ivo Stassen
Timothée Stassin
Alexander John Cruz
Oguzhan Orkut Okudur
Silvia Armini
Chris Wilson
Stefan De Gendt
Rob Ameloot
spellingShingle Mikhail Krishtab
Ivo Stassen
Timothée Stassin
Alexander John Cruz
Oguzhan Orkut Okudur
Silvia Armini
Chris Wilson
Stefan De Gendt
Rob Ameloot
Vapor-deposited zeolitic imidazolate frameworks as gap-filling ultra-low-k dielectrics
Nature Communications
author_facet Mikhail Krishtab
Ivo Stassen
Timothée Stassin
Alexander John Cruz
Oguzhan Orkut Okudur
Silvia Armini
Chris Wilson
Stefan De Gendt
Rob Ameloot
author_sort Mikhail Krishtab
title Vapor-deposited zeolitic imidazolate frameworks as gap-filling ultra-low-k dielectrics
title_short Vapor-deposited zeolitic imidazolate frameworks as gap-filling ultra-low-k dielectrics
title_full Vapor-deposited zeolitic imidazolate frameworks as gap-filling ultra-low-k dielectrics
title_fullStr Vapor-deposited zeolitic imidazolate frameworks as gap-filling ultra-low-k dielectrics
title_full_unstemmed Vapor-deposited zeolitic imidazolate frameworks as gap-filling ultra-low-k dielectrics
title_sort vapor-deposited zeolitic imidazolate frameworks as gap-filling ultra-low-k dielectrics
publisher Nature Publishing Group
series Nature Communications
issn 2041-1723
publishDate 2019-08-01
description Insulating materials combining a high mechanical stability, a low dielectric constant and the ability to completely fill narrow gaps are essential to fabricate interconnects for future high-performance chips. Here, the authors integrate zeolitic imidazolate frameworks as ultra-low-k dielectrics within a 90 nm pitch metallization layer via selective vapor-based conversion of metal oxide films.
url https://doi.org/10.1038/s41467-019-11703-x
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