Characterizations of InN Thin Films Grown on Si (110) Substrate by Reactive Sputtering
Indium nitride (InN) thin films were deposited onto Si (110) by reactive sputtering and pure In target at ambient temperature. The effects of the Ar–N2 sputtering gas mixture on the structural properties of the films were investigated by using scanning electron microscope, energy-dispersive X-ray sp...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Hindawi Limited
2011-01-01
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| Series: | Journal of Nanomaterials |
| Online Access: | http://dx.doi.org/10.1155/2011/579427 |