Mechanism of the performance improvement of TiO2-x-based field-effect transistor using SiO2 as gate insulator
RF magnetron sputtered titanium oxide (TiO2-x) thin films were used as active channel layer to fabricate field-effect transistors (FETs). In the as-prepared FETs, poor FET performance was found, with a low on-to-off current ratio of ∼500 and a high sub-threshold slope. It is attributed the existence...
| Main Authors: | , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2011-09-01
|
| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.3646525 |