THE USE OF POROUS ANODIC OXIDE OF SILICON IN THE PRODUCTION OF SEMICONDUCTOR DEVICES
The article describes the technological processes for manufacturing high-voltage diodes, varicaps and Schottky diodes using layers of porous anodic oxide of silicon. It is shown that the growth features of anodic oxide of silicon at an increased voltage makes it possible to significantly improve the...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Kherson National Technical University
2017-10-01
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| Series: | Biomedicinskaâ Inženeriâ i Èlektronika |
| Subjects: | |
| Online Access: | http://biofbe.esrae.ru/pdf/2017/4/1116.pdf |