Effectiveness of models of degradation of functional parameters for predicting the parametric reliability of semiconductor devices

For semiconductor devices of high power, the authors experimentally obtained of models of functional degradation parameter in the form of the conditional density of its distribution under the assumption of three hypotheses about the distribution law at the points of operating time: normal, two-param...

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Bibliographic Details
Main Authors: S. M. Borovikov, N. I. Tsyrelchuk, S. S. Dick, E. N. Shneiderov
Format: Article
Language:Russian
Published: Educational institution «Belarusian State University of Informatics and Radioelectronics» 2019-06-01
Series:Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki
Subjects:
Online Access:https://doklady.bsuir.by/jour/article/view/1011