Effectiveness of models of degradation of functional parameters for predicting the parametric reliability of semiconductor devices
For semiconductor devices of high power, the authors experimentally obtained of models of functional degradation parameter in the form of the conditional density of its distribution under the assumption of three hypotheses about the distribution law at the points of operating time: normal, two-param...
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Educational institution «Belarusian State University of Informatics and Radioelectronics»
2019-06-01
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Online Access: | https://doklady.bsuir.by/jour/article/view/1011 |
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doaj-888fb4de879c49b9a3d069c6f8d378bd2021-07-28T16:19:55ZrusEducational institution «Belarusian State University of Informatics and Radioelectronics»Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki1729-76482019-06-010550561010Effectiveness of models of degradation of functional parameters for predicting the parametric reliability of semiconductor devicesS. M. Borovikov0N. I. Tsyrelchuk1S. S. Dick2E. N. Shneiderov3Белорусский государственный университет информатики и радиоэлектроники, Республика БеларусьБелорусский государственный университет информатики и радиоэлектроники, Республика БеларусьБелорусский государственный университет информатики и радиоэлектроники, Республика БеларусьБелорусский государственный университет информатики и радиоэлектроники, Республика БеларусьFor semiconductor devices of high power, the authors experimentally obtained of models of functional degradation parameter in the form of the conditional density of its distribution under the assumption of three hypotheses about the distribution law at the points of operating time: normal, two-parameter exponential and Weibull-Gnedenko. Using the average prediction error, the authors compared the effectiveness of degradation models in determining of the parametric reliability of new samples of semiconductor devices of the same type.https://doklady.bsuir.by/jour/article/view/1011semiconductor devicestransistorsparametric reliabilitymodel of parameter degradationprediction error |
collection |
DOAJ |
language |
Russian |
format |
Article |
sources |
DOAJ |
author |
S. M. Borovikov N. I. Tsyrelchuk S. S. Dick E. N. Shneiderov |
spellingShingle |
S. M. Borovikov N. I. Tsyrelchuk S. S. Dick E. N. Shneiderov Effectiveness of models of degradation of functional parameters for predicting the parametric reliability of semiconductor devices Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki semiconductor devices transistors parametric reliability model of parameter degradation prediction error |
author_facet |
S. M. Borovikov N. I. Tsyrelchuk S. S. Dick E. N. Shneiderov |
author_sort |
S. M. Borovikov |
title |
Effectiveness of models of degradation of functional parameters for predicting the parametric reliability of semiconductor devices |
title_short |
Effectiveness of models of degradation of functional parameters for predicting the parametric reliability of semiconductor devices |
title_full |
Effectiveness of models of degradation of functional parameters for predicting the parametric reliability of semiconductor devices |
title_fullStr |
Effectiveness of models of degradation of functional parameters for predicting the parametric reliability of semiconductor devices |
title_full_unstemmed |
Effectiveness of models of degradation of functional parameters for predicting the parametric reliability of semiconductor devices |
title_sort |
effectiveness of models of degradation of functional parameters for predicting the parametric reliability of semiconductor devices |
publisher |
Educational institution «Belarusian State University of Informatics and Radioelectronics» |
series |
Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki |
issn |
1729-7648 |
publishDate |
2019-06-01 |
description |
For semiconductor devices of high power, the authors experimentally obtained of models of functional degradation parameter in the form of the conditional density of its distribution under the assumption of three hypotheses about the distribution law at the points of operating time: normal, two-parameter exponential and Weibull-Gnedenko. Using the average prediction error, the authors compared the effectiveness of degradation models in determining of the parametric reliability of new samples of semiconductor devices of the same type. |
topic |
semiconductor devices transistors parametric reliability model of parameter degradation prediction error |
url |
https://doklady.bsuir.by/jour/article/view/1011 |
work_keys_str_mv |
AT smborovikov effectivenessofmodelsofdegradationoffunctionalparametersforpredictingtheparametricreliabilityofsemiconductordevices AT nitsyrelchuk effectivenessofmodelsofdegradationoffunctionalparametersforpredictingtheparametricreliabilityofsemiconductordevices AT ssdick effectivenessofmodelsofdegradationoffunctionalparametersforpredictingtheparametricreliabilityofsemiconductordevices AT enshneiderov effectivenessofmodelsofdegradationoffunctionalparametersforpredictingtheparametricreliabilityofsemiconductordevices |
_version_ |
1721267751287259136 |