Effectiveness of models of degradation of functional parameters for predicting the parametric reliability of semiconductor devices

For semiconductor devices of high power, the authors experimentally obtained of models of functional degradation parameter in the form of the conditional density of its distribution under the assumption of three hypotheses about the distribution law at the points of operating time: normal, two-param...

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Main Authors:	S. M. Borovikov, N. I. Tsyrelchuk, S. S. Dick, E. N. Shneiderov
Format:	Article
Language:	Russian
Published:	Educational institution «Belarusian State University of Informatics and Radioelectronics» 2019-06-01
Series:	Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki
Subjects:	semiconductor devices transistors parametric reliability model of parameter degradation prediction error
Online Access:	https://doklady.bsuir.by/jour/article/view/1011

id	doaj-888fb4de879c49b9a3d069c6f8d378bd
record_format	Article
spelling	doaj-888fb4de879c49b9a3d069c6f8d378bd2021-07-28T16:19:55ZrusEducational institution «Belarusian State University of Informatics and Radioelectronics»Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki1729-76482019-06-010550561010Effectiveness of models of degradation of functional parameters for predicting the parametric reliability of semiconductor devicesS. M. Borovikov0N. I. Tsyrelchuk1S. S. Dick2E. N. Shneiderov3Белорусский государственный университет информатики и радиоэлектроники, Республика БеларусьБелорусский государственный университет информатики и радиоэлектроники, Республика БеларусьБелорусский государственный университет информатики и радиоэлектроники, Республика БеларусьБелорусский государственный университет информатики и радиоэлектроники, Республика БеларусьFor semiconductor devices of high power, the authors experimentally obtained of models of functional degradation parameter in the form of the conditional density of its distribution under the assumption of three hypotheses about the distribution law at the points of operating time: normal, two-parameter exponential and Weibull-Gnedenko. Using the average prediction error, the authors compared the effectiveness of degradation models in determining of the parametric reliability of new samples of semiconductor devices of the same type.https://doklady.bsuir.by/jour/article/view/1011semiconductor devicestransistorsparametric reliabilitymodel of parameter degradationprediction error
collection	DOAJ
language	Russian
format	Article
sources	DOAJ
author	S. M. Borovikov N. I. Tsyrelchuk S. S. Dick E. N. Shneiderov
spellingShingle	S. M. Borovikov N. I. Tsyrelchuk S. S. Dick E. N. Shneiderov Effectiveness of models of degradation of functional parameters for predicting the parametric reliability of semiconductor devices Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki semiconductor devices transistors parametric reliability model of parameter degradation prediction error
author_facet	S. M. Borovikov N. I. Tsyrelchuk S. S. Dick E. N. Shneiderov
author_sort	S. M. Borovikov
title	Effectiveness of models of degradation of functional parameters for predicting the parametric reliability of semiconductor devices
title_short	Effectiveness of models of degradation of functional parameters for predicting the parametric reliability of semiconductor devices
title_full	Effectiveness of models of degradation of functional parameters for predicting the parametric reliability of semiconductor devices
title_fullStr	Effectiveness of models of degradation of functional parameters for predicting the parametric reliability of semiconductor devices
title_full_unstemmed	Effectiveness of models of degradation of functional parameters for predicting the parametric reliability of semiconductor devices
title_sort	effectiveness of models of degradation of functional parameters for predicting the parametric reliability of semiconductor devices
publisher	Educational institution «Belarusian State University of Informatics and Radioelectronics»
series	Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki
issn	1729-7648
publishDate	2019-06-01
description	For semiconductor devices of high power, the authors experimentally obtained of models of functional degradation parameter in the form of the conditional density of its distribution under the assumption of three hypotheses about the distribution law at the points of operating time: normal, two-parameter exponential and Weibull-Gnedenko. Using the average prediction error, the authors compared the effectiveness of degradation models in determining of the parametric reliability of new samples of semiconductor devices of the same type.
topic	semiconductor devices transistors parametric reliability model of parameter degradation prediction error
url	https://doklady.bsuir.by/jour/article/view/1011
work_keys_str_mv	AT smborovikov effectivenessofmodelsofdegradationoffunctionalparametersforpredictingtheparametricreliabilityofsemiconductordevices AT nitsyrelchuk effectivenessofmodelsofdegradationoffunctionalparametersforpredictingtheparametricreliabilityofsemiconductordevices AT ssdick effectivenessofmodelsofdegradationoffunctionalparametersforpredictingtheparametricreliabilityofsemiconductordevices AT enshneiderov effectivenessofmodelsofdegradationoffunctionalparametersforpredictingtheparametricreliabilityofsemiconductordevices
_version_	1721267751287259136

Effectiveness of models of degradation of functional parameters for predicting the parametric reliability of semiconductor devices

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