Gd doping effect in p-type Bi2Te3 single crystals
It is generally accepted that Bi2Te3 prepared from stoichiometric melts has p-type charge carriers generated from BiTe-type antisite defects, while Bi2Te3 grown under Te-rich condition becomes n-type due to another type of TeBi antisite defects. We report the magnetic and transport properties of Gdx...
| Main Authors: | , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2018-10-01
|
| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.5042494 |