Substantial enhancement of red emission intensity by embedding Eu-doped GaN into a microcavity

Substantial enhancement of red emission intensity by embedding Eu-doped GaN into a microcavity

We investigate resonantly excited photoluminescence from a Eu,O-codoped GaN layer embedded into a microcavity, consisting of an AlGaN/GaN distributed Bragg reflector and a Ag reflecting mirror. The microcavity is responsible for a 18.6-fold increase of the Eu emission intensity at ∼10K, and a 21-fol...

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Bibliographic Details
Main Authors: Tomohiro Inaba, Dong-gun Lee, Ryuta Wakamatsu, Takanori Kojima, Brandon Mitchell, Antonio Capretti, Tom Gregorkiewicz, Atsushi Koizumi, Yasufumi Fujiwara
Format: Article
Language:English
Published: AIP Publishing LLC 2016-04-01
Series:AIP Advances
Online Access:http://dx.doi.org/10.1063/1.4946849

Internet

http://dx.doi.org/10.1063/1.4946849

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