Substantial enhancement of red emission intensity by embedding Eu-doped GaN into a microcavity

Substantial enhancement of red emission intensity by embedding Eu-doped GaN into a microcavity

We investigate resonantly excited photoluminescence from a Eu,O-codoped GaN layer embedded into a microcavity, consisting of an AlGaN/GaN distributed Bragg reflector and a Ag reflecting mirror. The microcavity is responsible for a 18.6-fold increase of the Eu emission intensity at ∼10K, and a 21-fol...

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Main Authors: Tomohiro Inaba, Dong-gun Lee, Ryuta Wakamatsu, Takanori Kojima, Brandon Mitchell, Antonio Capretti, Tom Gregorkiewicz, Atsushi Koizumi, Yasufumi Fujiwara
Format: Article
Language:English
Published: AIP Publishing LLC 2016-04-01
Series:AIP Advances
Online Access:http://dx.doi.org/10.1063/1.4946849
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spelling doaj-88f6b560013c4d8ca85192eaafa5ad292020-11-25T02:16:55ZengAIP Publishing LLCAIP Advances2158-32262016-04-0164045105045105-610.1063/1.4946849017604ADVSubstantial enhancement of red emission intensity by embedding Eu-doped GaN into a microcavityTomohiro Inaba0Dong-gun Lee1Ryuta Wakamatsu2Takanori Kojima3Brandon Mitchell4Antonio Capretti5Tom Gregorkiewicz6Atsushi Koizumi7Yasufumi Fujiwara8Division of Materials and Manufacturing Science, Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, JapanDivision of Materials and Manufacturing Science, Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, JapanDivision of Materials and Manufacturing Science, Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, JapanDivision of Materials and Manufacturing Science, Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, JapanDepartment of Physics and Astronomy, University of Mt. Union, 1972 Clark Ave, Alliance, OH, 44601, USAVan der Waals-Zeeman Institute, University of Amsterdam, Science Park 904, 1098 XH Amsterdam, The NetherlandsVan der Waals-Zeeman Institute, University of Amsterdam, Science Park 904, 1098 XH Amsterdam, The NetherlandsDivision of Materials and Manufacturing Science, Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, JapanDivision of Materials and Manufacturing Science, Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, JapanWe investigate resonantly excited photoluminescence from a Eu,O-codoped GaN layer embedded into a microcavity, consisting of an AlGaN/GaN distributed Bragg reflector and a Ag reflecting mirror. The microcavity is responsible for a 18.6-fold increase of the Eu emission intensity at ∼10K, and a 21-fold increase at room temperature. We systematically investigate the origin of this enhancement, and we conclude that it is due to the combination of several effects including, the lifetime shortening of the Eu emission, the strain-induced piezoelectric effect, and the increased extraction and excitation field efficiencies. This study paves the way for an alternative method to enhance the photoluminescence intensity in rare-earth doped semiconductor structures.http://dx.doi.org/10.1063/1.4946849
collection DOAJ
language English
format Article
sources DOAJ
author Tomohiro Inaba
Dong-gun Lee
Ryuta Wakamatsu
Takanori Kojima
Brandon Mitchell
Antonio Capretti
Tom Gregorkiewicz
Atsushi Koizumi
Yasufumi Fujiwara
spellingShingle Tomohiro Inaba
Dong-gun Lee
Ryuta Wakamatsu
Takanori Kojima
Brandon Mitchell
Antonio Capretti
Tom Gregorkiewicz
Atsushi Koizumi
Yasufumi Fujiwara
Substantial enhancement of red emission intensity by embedding Eu-doped GaN into a microcavity
AIP Advances
author_facet Tomohiro Inaba
Dong-gun Lee
Ryuta Wakamatsu
Takanori Kojima
Brandon Mitchell
Antonio Capretti
Tom Gregorkiewicz
Atsushi Koizumi
Yasufumi Fujiwara
author_sort Tomohiro Inaba
title Substantial enhancement of red emission intensity by embedding Eu-doped GaN into a microcavity
title_short Substantial enhancement of red emission intensity by embedding Eu-doped GaN into a microcavity
title_full Substantial enhancement of red emission intensity by embedding Eu-doped GaN into a microcavity
title_fullStr Substantial enhancement of red emission intensity by embedding Eu-doped GaN into a microcavity
title_full_unstemmed Substantial enhancement of red emission intensity by embedding Eu-doped GaN into a microcavity
title_sort substantial enhancement of red emission intensity by embedding eu-doped gan into a microcavity
publisher AIP Publishing LLC
series AIP Advances
issn 2158-3226
publishDate 2016-04-01
description We investigate resonantly excited photoluminescence from a Eu,O-codoped GaN layer embedded into a microcavity, consisting of an AlGaN/GaN distributed Bragg reflector and a Ag reflecting mirror. The microcavity is responsible for a 18.6-fold increase of the Eu emission intensity at ∼10K, and a 21-fold increase at room temperature. We systematically investigate the origin of this enhancement, and we conclude that it is due to the combination of several effects including, the lifetime shortening of the Eu emission, the strain-induced piezoelectric effect, and the increased extraction and excitation field efficiencies. This study paves the way for an alternative method to enhance the photoluminescence intensity in rare-earth doped semiconductor structures.
url http://dx.doi.org/10.1063/1.4946849
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AT donggunlee substantialenhancementofredemissionintensitybyembeddingeudopedganintoamicrocavity
AT ryutawakamatsu substantialenhancementofredemissionintensitybyembeddingeudopedganintoamicrocavity
AT takanorikojima substantialenhancementofredemissionintensitybyembeddingeudopedganintoamicrocavity
AT brandonmitchell substantialenhancementofredemissionintensitybyembeddingeudopedganintoamicrocavity
AT antoniocapretti substantialenhancementofredemissionintensitybyembeddingeudopedganintoamicrocavity
AT tomgregorkiewicz substantialenhancementofredemissionintensitybyembeddingeudopedganintoamicrocavity
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AT yasufumifujiwara substantialenhancementofredemissionintensitybyembeddingeudopedganintoamicrocavity
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