Substantial enhancement of red emission intensity by embedding Eu-doped GaN into a microcavity
We investigate resonantly excited photoluminescence from a Eu,O-codoped GaN layer embedded into a microcavity, consisting of an AlGaN/GaN distributed Bragg reflector and a Ag reflecting mirror. The microcavity is responsible for a 18.6-fold increase of the Eu emission intensity at ∼10K, and a 21-fol...
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doaj-88f6b560013c4d8ca85192eaafa5ad292020-11-25T02:16:55ZengAIP Publishing LLCAIP Advances2158-32262016-04-0164045105045105-610.1063/1.4946849017604ADVSubstantial enhancement of red emission intensity by embedding Eu-doped GaN into a microcavityTomohiro Inaba0Dong-gun Lee1Ryuta Wakamatsu2Takanori Kojima3Brandon Mitchell4Antonio Capretti5Tom Gregorkiewicz6Atsushi Koizumi7Yasufumi Fujiwara8Division of Materials and Manufacturing Science, Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, JapanDivision of Materials and Manufacturing Science, Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, JapanDivision of Materials and Manufacturing Science, Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, JapanDivision of Materials and Manufacturing Science, Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, JapanDepartment of Physics and Astronomy, University of Mt. Union, 1972 Clark Ave, Alliance, OH, 44601, USAVan der Waals-Zeeman Institute, University of Amsterdam, Science Park 904, 1098 XH Amsterdam, The NetherlandsVan der Waals-Zeeman Institute, University of Amsterdam, Science Park 904, 1098 XH Amsterdam, The NetherlandsDivision of Materials and Manufacturing Science, Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, JapanDivision of Materials and Manufacturing Science, Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, JapanWe investigate resonantly excited photoluminescence from a Eu,O-codoped GaN layer embedded into a microcavity, consisting of an AlGaN/GaN distributed Bragg reflector and a Ag reflecting mirror. The microcavity is responsible for a 18.6-fold increase of the Eu emission intensity at ∼10K, and a 21-fold increase at room temperature. We systematically investigate the origin of this enhancement, and we conclude that it is due to the combination of several effects including, the lifetime shortening of the Eu emission, the strain-induced piezoelectric effect, and the increased extraction and excitation field efficiencies. This study paves the way for an alternative method to enhance the photoluminescence intensity in rare-earth doped semiconductor structures.http://dx.doi.org/10.1063/1.4946849 |
collection |
DOAJ |
language |
English |
format |
Article |
sources |
DOAJ |
author |
Tomohiro Inaba Dong-gun Lee Ryuta Wakamatsu Takanori Kojima Brandon Mitchell Antonio Capretti Tom Gregorkiewicz Atsushi Koizumi Yasufumi Fujiwara |
spellingShingle |
Tomohiro Inaba Dong-gun Lee Ryuta Wakamatsu Takanori Kojima Brandon Mitchell Antonio Capretti Tom Gregorkiewicz Atsushi Koizumi Yasufumi Fujiwara Substantial enhancement of red emission intensity by embedding Eu-doped GaN into a microcavity AIP Advances |
author_facet |
Tomohiro Inaba Dong-gun Lee Ryuta Wakamatsu Takanori Kojima Brandon Mitchell Antonio Capretti Tom Gregorkiewicz Atsushi Koizumi Yasufumi Fujiwara |
author_sort |
Tomohiro Inaba |
title |
Substantial enhancement of red emission intensity by embedding Eu-doped GaN into a microcavity |
title_short |
Substantial enhancement of red emission intensity by embedding Eu-doped GaN into a microcavity |
title_full |
Substantial enhancement of red emission intensity by embedding Eu-doped GaN into a microcavity |
title_fullStr |
Substantial enhancement of red emission intensity by embedding Eu-doped GaN into a microcavity |
title_full_unstemmed |
Substantial enhancement of red emission intensity by embedding Eu-doped GaN into a microcavity |
title_sort |
substantial enhancement of red emission intensity by embedding eu-doped gan into a microcavity |
publisher |
AIP Publishing LLC |
series |
AIP Advances |
issn |
2158-3226 |
publishDate |
2016-04-01 |
description |
We investigate resonantly excited photoluminescence from a Eu,O-codoped GaN layer embedded into a microcavity, consisting of an AlGaN/GaN distributed Bragg reflector and a Ag reflecting mirror. The microcavity is responsible for a 18.6-fold increase of the Eu emission intensity at ∼10K, and a 21-fold increase at room temperature. We systematically investigate the origin of this enhancement, and we conclude that it is due to the combination of several effects including, the lifetime shortening of the Eu emission, the strain-induced piezoelectric effect, and the increased extraction and excitation field efficiencies. This study paves the way for an alternative method to enhance the photoluminescence intensity in rare-earth doped semiconductor structures. |
url |
http://dx.doi.org/10.1063/1.4946849 |
work_keys_str_mv |
AT tomohiroinaba substantialenhancementofredemissionintensitybyembeddingeudopedganintoamicrocavity AT donggunlee substantialenhancementofredemissionintensitybyembeddingeudopedganintoamicrocavity AT ryutawakamatsu substantialenhancementofredemissionintensitybyembeddingeudopedganintoamicrocavity AT takanorikojima substantialenhancementofredemissionintensitybyembeddingeudopedganintoamicrocavity AT brandonmitchell substantialenhancementofredemissionintensitybyembeddingeudopedganintoamicrocavity AT antoniocapretti substantialenhancementofredemissionintensitybyembeddingeudopedganintoamicrocavity AT tomgregorkiewicz substantialenhancementofredemissionintensitybyembeddingeudopedganintoamicrocavity AT atsushikoizumi substantialenhancementofredemissionintensitybyembeddingeudopedganintoamicrocavity AT yasufumifujiwara substantialenhancementofredemissionintensitybyembeddingeudopedganintoamicrocavity |
_version_ |
1724888228065968128 |