Highly Conductive n-Al<sub>0.65</sub>Ga<sub>0.35</sub>N Grown by MOCVD Using Low V/III Ratio

Highly Conductive n-Al<sub>0.65</sub>Ga<sub>0.35</sub>N Grown by MOCVD Using Low V/III Ratio

Highly conductive silicon-doped AlGaN and ohmic contacts are needed for deep-UV LEDs and ultrawide bandgap electronics. We demonstrate improved n-Al<sub>0.65</sub>Ga<sub>0.35</sub>N films grown by metal–organic chemical vapor deposition (MOCVD) on sapphire substrates using a...

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Bibliographic Details
Main Authors: Christian J. Zollner, Yifan Yao, Michael Wang, Feng Wu, Michael Iza, James S. Speck, Steven P. DenBaars, Shuji Nakamura
Format: Article
Language:English
Published: MDPI AG 2021-08-01
Series:Crystals
Subjects:
ultraviolet LED
III-nitride
AlGaN
MOCVD
ultrawide bandgap
self-compensation
Online Access:https://www.mdpi.com/2073-4352/11/8/1006

Internet

https://www.mdpi.com/2073-4352/11/8/1006

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