Investigation of the Young’s Modulus and the Residual Stress of 4H-SiC Circular Membranes on 4H-SiC Substrates

Investigation of the Young’s Modulus and the Residual Stress of 4H-SiC Circular Membranes on 4H-SiC Substrates

The stress state is a crucial parameter for the design of innovative microelectromechanical systems based on silicon carbide (SiC) material. Hence, mechanical properties of such structures highly depend on the fabrication process. Despite significant progresses in thin-film growth and fabrication pr...

Full description

Bibliographic Details
Main Authors: Jaweb Ben Messaoud, Jean-François Michaud, Dominique Certon, Massimo Camarda, Nicolò Piluso, Laurent Colin, Flavien Barcella, Daniel Alquier
Format: Article
Language:English
Published: MDPI AG 2019-11-01
Series:Micromachines
Subjects:
4h-sic
bulk micromachining
electrochemical etching
circular membrane
bulge test
vibrometry
mechanical properties
young’s modulus
residual stress
fem
Online Access:https://www.mdpi.com/2072-666X/10/12/801

Internet

https://www.mdpi.com/2072-666X/10/12/801

Similar Items