Compact and Low-Profile On-Chip Antenna Using Underside Electromagnetic Coupling Mechanism for Terahertz Front-End Transceivers
The results presented in this paper show that by employing a combination of metasurface and substrate integrated waveguide (SIW) technologies, we can realize a compact and low-profile antenna that overcomes the drawbacks of narrow-bandwidth and low-radiation properties encountered by terahertz anten...
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doaj-89877d46d9994fe2890b37ec82e89bf12021-06-01T01:05:20ZengMDPI AGElectronics2079-92922021-05-01101264126410.3390/electronics10111264Compact and Low-Profile On-Chip Antenna Using Underside Electromagnetic Coupling Mechanism for Terahertz Front-End TransceiversMohammad Alibakhshikenari0Bal S. Virdee1Ayman A. Althuwayb2Dion Mariyanayagam3Ernesto Limiti4Electronic Engineering Department, University of Rome “Tor Vergata”, Via del Politecnico 1, 00133 Rome, ItalyCenter for Communications Technology & Mathematics, School of Computing & Digital Media, London Metropolitan University, London N7 8DB, UKDepartment of Electrical Engineering, Jouf University, Sakaka 72388, Saudi ArabiaCenter for Communications Technology & Mathematics, School of Computing & Digital Media, London Metropolitan University, London N7 8DB, UKElectronic Engineering Department, University of Rome “Tor Vergata”, Via del Politecnico 1, 00133 Rome, ItalyThe results presented in this paper show that by employing a combination of metasurface and substrate integrated waveguide (SIW) technologies, we can realize a compact and low-profile antenna that overcomes the drawbacks of narrow-bandwidth and low-radiation properties encountered by terahertz antennas on-chip (AoC). In addition, an effective RF cross-shaped feed structure is used to excite the antenna from its underside by coupling, electromagnetically, RF energy through the multi-layered antenna structure. The feed mechanism facilitates integration with the integrated circuits. The proposed antenna is constructed from five stacked layers, comprising metal–silicon–metal–silicon–metal. The dimensions of the AoC are 1 × 1 × 0.265 mm<sup>3</sup>. The AoC is shown to have an impedance match, radiation gain and efficiency of ≤ −15 dB, 8.5 dBi and 67.5%, respectively, over a frequency range of 0.20–0.22 THz. The results show that the proposed AoC design is viable for terahertz front-end applications.https://www.mdpi.com/2079-9292/10/11/1264antenna on-chip (AoC)metasurfacesubstrate integrated waveguide (SIW)terahertz (THz)electromagnetic (EM) couplingfeeding mechanism |
collection |
DOAJ |
language |
English |
format |
Article |
sources |
DOAJ |
author |
Mohammad Alibakhshikenari Bal S. Virdee Ayman A. Althuwayb Dion Mariyanayagam Ernesto Limiti |
spellingShingle |
Mohammad Alibakhshikenari Bal S. Virdee Ayman A. Althuwayb Dion Mariyanayagam Ernesto Limiti Compact and Low-Profile On-Chip Antenna Using Underside Electromagnetic Coupling Mechanism for Terahertz Front-End Transceivers Electronics antenna on-chip (AoC) metasurface substrate integrated waveguide (SIW) terahertz (THz) electromagnetic (EM) coupling feeding mechanism |
author_facet |
Mohammad Alibakhshikenari Bal S. Virdee Ayman A. Althuwayb Dion Mariyanayagam Ernesto Limiti |
author_sort |
Mohammad Alibakhshikenari |
title |
Compact and Low-Profile On-Chip Antenna Using Underside Electromagnetic Coupling Mechanism for Terahertz Front-End Transceivers |
title_short |
Compact and Low-Profile On-Chip Antenna Using Underside Electromagnetic Coupling Mechanism for Terahertz Front-End Transceivers |
title_full |
Compact and Low-Profile On-Chip Antenna Using Underside Electromagnetic Coupling Mechanism for Terahertz Front-End Transceivers |
title_fullStr |
Compact and Low-Profile On-Chip Antenna Using Underside Electromagnetic Coupling Mechanism for Terahertz Front-End Transceivers |
title_full_unstemmed |
Compact and Low-Profile On-Chip Antenna Using Underside Electromagnetic Coupling Mechanism for Terahertz Front-End Transceivers |
title_sort |
compact and low-profile on-chip antenna using underside electromagnetic coupling mechanism for terahertz front-end transceivers |
publisher |
MDPI AG |
series |
Electronics |
issn |
2079-9292 |
publishDate |
2021-05-01 |
description |
The results presented in this paper show that by employing a combination of metasurface and substrate integrated waveguide (SIW) technologies, we can realize a compact and low-profile antenna that overcomes the drawbacks of narrow-bandwidth and low-radiation properties encountered by terahertz antennas on-chip (AoC). In addition, an effective RF cross-shaped feed structure is used to excite the antenna from its underside by coupling, electromagnetically, RF energy through the multi-layered antenna structure. The feed mechanism facilitates integration with the integrated circuits. The proposed antenna is constructed from five stacked layers, comprising metal–silicon–metal–silicon–metal. The dimensions of the AoC are 1 × 1 × 0.265 mm<sup>3</sup>. The AoC is shown to have an impedance match, radiation gain and efficiency of ≤ −15 dB, 8.5 dBi and 67.5%, respectively, over a frequency range of 0.20–0.22 THz. The results show that the proposed AoC design is viable for terahertz front-end applications. |
topic |
antenna on-chip (AoC) metasurface substrate integrated waveguide (SIW) terahertz (THz) electromagnetic (EM) coupling feeding mechanism |
url |
https://www.mdpi.com/2079-9292/10/11/1264 |
work_keys_str_mv |
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