Structural Stability of Diffusion Barriers in Cu/Ru/MgO/Ta/Si
Various structures of Cu (50 nm)/Ru (2 nm)/MgO (0.5–3 nm)/Ta (2 nm)/Si were prepared by sputtering and electroplating techniques, in which the ultra-thin trilayer of Ru (2 nm)/MgO (0.5–3 nm)/Ta (2 nm) is used as the diffusion barrier against the interdiffusion between Cu film and Si substrate. The...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2015-11-01
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| Series: | Nanomaterials |
| Subjects: | |
| Online Access: | http://www.mdpi.com/2079-4991/5/4/1840 |