Effect of Annealing Atmosphere on the Diode Behaviour of ZnO/Si Heterojunction
The effect of thermal annealing atmosphere on the electrical characteristics of Zinc oxide (ZnO) nanorods/p-Silicon (Si) diodes is investigated. ZnO nanorods are grown by low-temperature aqueous solution growth method and annealed in Nitrogen and Oxygen atmosphere. As-grown and annealed nanorods are...
| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Kaunas University of Technology
2021-08-01
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| Series: | Elektronika ir Elektrotechnika |
| Subjects: | |
| Online Access: | https://eejournal.ktu.lt/index.php/elt/article/view/28723 |