Self-Compliance and High Performance Pt/HfO<sub>x</sub>/Ti RRAM Achieved through Annealing
A self-compliance resistive random access memory (RRAM) achieved through thermal annealing of a Pt/HfO<sub>x</sub>/Ti structure. The electrical characteristic measurements show that the forming voltage of the device annealing at 500 °C decreased, and the switching ratio and unif...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2020-03-01
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| Series: | Nanomaterials |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2079-4991/10/3/457 |