Electron traps formed by gamma-ray irradiation in homoepitaxial n-type GaN and their annealing behavior
Gamma-ray irradiations of up to 500 kGy on homoepitaxial n-type GaN layers were carried out, and the formation of electron traps was investigated by deep-level transient spectroscopy (DLTS) using Ni Schottky barrier diodes (SBDs). Before performing DLTS, current–voltage (I–V) and capacitance–voltage...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2020-04-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.5144158 |