Electron traps formed by gamma-ray irradiation in homoepitaxial n-type GaN and their annealing behavior

Electron traps formed by gamma-ray irradiation in homoepitaxial n-type GaN and their annealing behavior

Gamma-ray irradiations of up to 500 kGy on homoepitaxial n-type GaN layers were carried out, and the formation of electron traps was investigated by deep-level transient spectroscopy (DLTS) using Ni Schottky barrier diodes (SBDs). Before performing DLTS, current–voltage (I–V) and capacitance–voltage...

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Bibliographic Details
Main Authors:	Keito Aoshima, Kazutaka Kanegae, Masahiro Horita, Jun Suda
Format:	Article
Language:	English
Published:	AIP Publishing LLC 2020-04-01
Series:	AIP Advances
Online Access:	http://dx.doi.org/10.1063/1.5144158

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