Growth of highly conductive Al-rich AlGaN:Si with low group-III vacancy concentration

Growth of highly conductive Al-rich AlGaN:Si with low group-III vacancy concentration

The impact of AlGaN growth conditions on AlGaN:Si resistivity and surface morphology has been investigated using metalorganic chemical vapor deposition. Growth parameters including growth temperature, growth rate, and trimethylindium (TMI) flow have been systematically studied to minimize the resist...

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Bibliographic Details
Main Authors: Abdullah S. Almogbel, Christian J. Zollner, Burhan K. Saifaddin, Michael Iza, Jianfeng Wang, Yifan Yao, Michael Wang, Humberto Foronda, Igor Prozheev, Filip Tuomisto, Abdulrahman Albadri, Shuji Nakamura, Steven P. DenBaars, James S. Speck
Format: Article
Language:English
Published: AIP Publishing LLC 2021-09-01
Series:AIP Advances
Online Access:http://dx.doi.org/10.1063/5.0066652

Internet

http://dx.doi.org/10.1063/5.0066652

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