Growth of highly conductive Al-rich AlGaN:Si with low group-III vacancy concentration
The impact of AlGaN growth conditions on AlGaN:Si resistivity and surface morphology has been investigated using metalorganic chemical vapor deposition. Growth parameters including growth temperature, growth rate, and trimethylindium (TMI) flow have been systematically studied to minimize the resist...
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2021-09-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/5.0066652 |
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doaj-8a4633fbfbce4d6396f32cc8b4bbeca52021-10-06T14:17:12ZengAIP Publishing LLCAIP Advances2158-32262021-09-01119095119095119-810.1063/5.0066652Growth of highly conductive Al-rich AlGaN:Si with low group-III vacancy concentrationAbdullah S. Almogbel0Christian J. Zollner1Burhan K. Saifaddin2Michael Iza3Jianfeng Wang4Yifan Yao5Michael Wang6Humberto Foronda7Igor Prozheev8Filip Tuomisto9Abdulrahman Albadri10Shuji Nakamura11Steven P. DenBaars12James S. Speck13Materials Department, University of California, Santa Barbara, California 93106, USAMaterials Department, University of California, Santa Barbara, California 93106, USAKing Abdulaziz City for Science and Technology, Riyadh 11442, Saudi ArabiaMaterials Department, University of California, Santa Barbara, California 93106, USAMaterials Department, University of California, Santa Barbara, California 93106, USAMaterials Department, University of California, Santa Barbara, California 93106, USAMaterials Department, University of California, Santa Barbara, California 93106, USAMaterials Department, University of California, Santa Barbara, California 93106, USADepartment of Physics and Helsinki Institute of Physics, University of Helsinki, 00014 Helsinki, FinlandDepartment of Physics and Helsinki Institute of Physics, University of Helsinki, 00014 Helsinki, FinlandKing Abdulaziz City for Science and Technology, Riyadh 11442, Saudi ArabiaMaterials Department, University of California, Santa Barbara, California 93106, USAMaterials Department, University of California, Santa Barbara, California 93106, USAMaterials Department, University of California, Santa Barbara, California 93106, USAThe impact of AlGaN growth conditions on AlGaN:Si resistivity and surface morphology has been investigated using metalorganic chemical vapor deposition. Growth parameters including growth temperature, growth rate, and trimethylindium (TMI) flow have been systematically studied to minimize the resistivity of AlGaN:Si. We observed a strong anticorrelation between AlGaN:Si conductivity and growth temperature, suggesting increased silicon donor compensation at elevated temperatures. Secondary ion mass spectrometry and positron annihilation spectroscopy ruled out compensation by common impurities or group-III monovacancies as a reason for the observed phenomenon, in contrast to theoretical predictions. The underlying reason for AlGaN:Si resistivity dependence on growth temperature is discussed based on the possibility of silicon acting as a DX center in Al0.65Ga0.35N at high growth temperatures. We also show remarkable enhancement of AlGaN:Si conductivity by introducing TMI flow during growth. A minimum resistivity of 7.5 mΩ cm was obtained for n-type Al0.65Ga0.35N, which is among the lowest reported resistivity for this composition.http://dx.doi.org/10.1063/5.0066652 |
| collection |
DOAJ |
| language |
English |
| format |
Article |
| sources |
DOAJ |
| author |
Abdullah S. Almogbel Christian J. Zollner Burhan K. Saifaddin Michael Iza Jianfeng Wang Yifan Yao Michael Wang Humberto Foronda Igor Prozheev Filip Tuomisto Abdulrahman Albadri Shuji Nakamura Steven P. DenBaars James S. Speck |
| spellingShingle |
Abdullah S. Almogbel Christian J. Zollner Burhan K. Saifaddin Michael Iza Jianfeng Wang Yifan Yao Michael Wang Humberto Foronda Igor Prozheev Filip Tuomisto Abdulrahman Albadri Shuji Nakamura Steven P. DenBaars James S. Speck Growth of highly conductive Al-rich AlGaN:Si with low group-III vacancy concentration AIP Advances |
| author_facet |
Abdullah S. Almogbel Christian J. Zollner Burhan K. Saifaddin Michael Iza Jianfeng Wang Yifan Yao Michael Wang Humberto Foronda Igor Prozheev Filip Tuomisto Abdulrahman Albadri Shuji Nakamura Steven P. DenBaars James S. Speck |
| author_sort |
Abdullah S. Almogbel |
| title |
Growth of highly conductive Al-rich AlGaN:Si with low group-III vacancy concentration |
| title_short |
Growth of highly conductive Al-rich AlGaN:Si with low group-III vacancy concentration |
| title_full |
Growth of highly conductive Al-rich AlGaN:Si with low group-III vacancy concentration |
| title_fullStr |
Growth of highly conductive Al-rich AlGaN:Si with low group-III vacancy concentration |
| title_full_unstemmed |
Growth of highly conductive Al-rich AlGaN:Si with low group-III vacancy concentration |
| title_sort |
growth of highly conductive al-rich algan:si with low group-iii vacancy concentration |
| publisher |
AIP Publishing LLC |
| series |
AIP Advances |
| issn |
2158-3226 |
| publishDate |
2021-09-01 |
| description |
The impact of AlGaN growth conditions on AlGaN:Si resistivity and surface morphology has been investigated using metalorganic chemical vapor deposition. Growth parameters including growth temperature, growth rate, and trimethylindium (TMI) flow have been systematically studied to minimize the resistivity of AlGaN:Si. We observed a strong anticorrelation between AlGaN:Si conductivity and growth temperature, suggesting increased silicon donor compensation at elevated temperatures. Secondary ion mass spectrometry and positron annihilation spectroscopy ruled out compensation by common impurities or group-III monovacancies as a reason for the observed phenomenon, in contrast to theoretical predictions. The underlying reason for AlGaN:Si resistivity dependence on growth temperature is discussed based on the possibility of silicon acting as a DX center in Al0.65Ga0.35N at high growth temperatures. We also show remarkable enhancement of AlGaN:Si conductivity by introducing TMI flow during growth. A minimum resistivity of 7.5 mΩ cm was obtained for n-type Al0.65Ga0.35N, which is among the lowest reported resistivity for this composition. |
| url |
http://dx.doi.org/10.1063/5.0066652 |
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