Improvement of Electrical Performance in P-Channel LTPS Thin-Film Transistor with a-Si:H Surface Passivation

Improvement of Electrical Performance in P-Channel LTPS Thin-Film Transistor with a-Si:H Surface Passivation

We report the effects of surface passivation by depositing a hydrogenated amorphous silicon (a-Si:H) layer on the electrical characteristics of low temperature polycrystalline silicon thin film transistors (LTPS TFTs). The intrinsic a-Si:H layer was optimized by hydrogen dilution and its structural...

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Bibliographic Details
Main Authors: Kyungsoo Jang, Youngkuk Kim, Pham Duy Phong, Younjung Lee, Joonghyun Park, Junsin Yi
Format: Article
Language:English
Published: MDPI AG 2019-01-01
Series:Materials
Subjects:
poly-Si TFT
LTPS TFT
FT-IR
Raman
surface passivation
leakage current
Online Access:http://www.mdpi.com/1996-1944/12/1/161

Internet

http://www.mdpi.com/1996-1944/12/1/161

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