Selective Doping in Silicon Carbide Power Devices

Selective Doping in Silicon Carbide Power Devices

Silicon carbide (SiC) is the most mature wide band-gap semiconductor and is currently employed for the fabrication of high-efficiency power electronic devices, such as diodes and transistors. In this context, selective doping is one of the key processes needed for the fabrication of these devices. T...

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Bibliographic Details
Main Authors: Fabrizio Roccaforte, Patrick Fiorenza, Marilena Vivona, Giuseppe Greco, Filippo Giannazzo
Format: Article
Language:English
Published: MDPI AG 2021-07-01
Series:Materials
Subjects:
silicon carbide
4H-SiC
ion implantation
selective doping
electrical activation
post-implantation annealing
Online Access:https://www.mdpi.com/1996-1944/14/14/3923

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https://www.mdpi.com/1996-1944/14/14/3923

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