Single-Ion Implantation for the Development of Si-Based MOSFET Devices with Quantum Functionalities

Single-Ion Implantation for the Development of Si-Based MOSFET Devices with Quantum Functionalities

Interest in single-ion implantation is driven in part by research into development of solid-state devices that exhibit quantum behaviour in their electronic or optical characteristics. Here, we provide an overview of international research work on single ion implantation and single ion detection for...

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Bibliographic Details
Main Authors: Jeffrey C. McCallum, David N. Jamieson, Changyi Yang, Andrew D. Alves, Brett C. Johnson, Toby Hopf, Samuel C. Thompson, Jessica A. van Donkelaar
Format: Article
Language:English
Published: Hindawi Limited 2012-01-01
Series:Advances in Materials Science and Engineering
Online Access:http://dx.doi.org/10.1155/2012/272694

Internet

http://dx.doi.org/10.1155/2012/272694

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