Self-organized twist-heterostructures via aligned van der Waals epitaxy and solid-state transformations
Vertically stacked twisted layers of two-dimensional materials can trigger exciting fundamental physics. Here, authors report controlled growth of 30° twisted few-layer SnS2 over SnS2 via van der Waals epitaxy of an SnS intermediate and its transformation in the presence of excess sulfur.
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Nature Publishing Group
2019-12-01
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| Series: | Nature Communications |
| Online Access: | https://doi.org/10.1038/s41467-019-13488-5 |