Analysis of Temperature Dependent Effects on <italic>I–V</italic> Characteristics of Heterostructure Tunnel Field Effect Transistors
This paper provides an analysis of the intrinsic factors influencing the temperature dependence of the I<sub>d</sub>-V<sub>ds</sub>-V<sub>gs</sub> characteristics of heterostructure Tunnel FETs based on GaSb/InAs tunneling junctions. The temperature dependence of...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
IEEE
2016-01-01
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| Series: | IEEE Journal of the Electron Devices Society |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/7582405/ |