A 350-GHz Coupled Stack Oscillator with −0.8 dBm Output Power in 65-nm Bulk CMOS Process
This paper presents a push-push coupled stack oscillator that achieves a high output power level at terahertz (THz) wave frequency. The proposed stack oscillator core adopts a frequency selective negative resistance topology to improve negative transconductance at the fundamental frequency and a tra...
| Main Authors: | , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2020-07-01
|
| Series: | Electronics |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2079-9292/9/8/1214 |