A Hybrid Wide Drain Poly-Si FinTFT for RF Application
In this paper, a hybrid wide drain polycrystalline silicon (poly-Si) fin-like thin-film transistor (FinTFT) for radio frequency (RF) applications is fabricated. A high I<sub>ON</sub>/I<sub>OFF</sub> current ratio (>10<sup>8</sup>) and favorable gate control...
| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
IEEE
2018-01-01
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| Series: | IEEE Access |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/8438471/ |