Characterization of Gallium Indium Phosphide and Progress of Aluminum Gallium Indium Phosphide System Quantum-Well Laser Diode
Highly ordered gallium indium phosphide layers with the low bandgap have been successfully grown on the (100) GaAs substrates, the misorientation toward [01−1] direction, using the low-pressure metal organic chemical vapor deposition method. It is found that the optical properties of the layers are...
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| Format: | Article |
| Language: | English |
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MDPI AG
2017-07-01
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| Series: | Materials |
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| Online Access: | https://www.mdpi.com/1996-1944/10/8/875 |