Floating Body DRAM with Body Raised and Source/Drain Separation
One-Transistor (1T) DRAMs are one of the potential replacements for conventional 1T-1C dynamic memory cells for future scaling of embedded and stand-alone memory architectures. In this work, a scaled (channel length 10nm) floating body 1T memory device architecture with ultra-thin body is studied, w...
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| Format: | Article |
| Language: | English |
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MDPI AG
2021-03-01
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| Series: | Electronics |
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| Online Access: | https://www.mdpi.com/2079-9292/10/6/706 |