Impact of Sulfur Passivation on Carrier Transport Properties of In<sub>0.7</sub>Ga<sub>0.3</sub>As Quantum-Well MOSFETs

Impact of Sulfur Passivation on Carrier Transport Properties of In<sub>0.7</sub>Ga<sub>0.3</sub>As Quantum-Well MOSFETs

We investigated the impact of a sulfur passivation (S-passivation) process step on carrier transport properties of surface-channel In<sub>0.7</sub>Ga<sub>0.3</sub>As quantum-well (QW) Metal-Oxide-Semiconductor Field-Effect-Transistors (MOSFETs) with source/drain (S/D) regrowt...

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Bibliographic Details
Main Authors: Jun-Gyu Kim, Hyeon-Bhin Jo, In-Geun Lee, Tae-Woo Kim, Dae-Hyun Kim
Format: Article
Language:English
Published: IEEE 2021-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
In₀.₇Ga₀.₃As
MOSFET
passivation
carrier scattering mechanism
interface trap density
effective mobility
Online Access:https://ieeexplore.ieee.org/document/9348904/

Internet

https://ieeexplore.ieee.org/document/9348904/

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